![shallow trench isolation半導体](https://host.easylife.tw/files/RiotIsolator.png)
淺槽隔離,即shallowtrenchisolation,簡稱STI。通常用於0.25um以下工藝,通過利用氮化硅掩膜經過澱積、圖形化、刻蝕硅後形成槽,並在槽中填充澱積氧化物, ...,由嚴永民著作·2011—ShallowTrenchIsolation(STI)techniquesareessentialforsemiconductordeviceforredu...
工學院半導體材料與製程設備學程碩士論文
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由嚴永民著作·2011—ShallowTrenchIsolation(STI)techniquesareessentialforsemiconductordeviceforreducingelectricalinterferencesbetweendevicesofsub-microandsub100- ...
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